Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate-Reference-Cited by-同舟云学术

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Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Published:2009-06 Issue:22 Volume:94 Page:223506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nguyen Binh-Minh,Hoffman Darin,Huang Edward Kwei-wei,Bogdanov Simeon,Delaunay Pierre-Yves,Razeghi Manijeh,Tidrow Meimei Z.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3148326

Reference20 articles.

1. Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

2. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

3. Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

4. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors

5. High-performance focal plane array based on type-II InAs/GaSb superlattice heterostructures

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1. Infrared Barrier Detectors With Metamorphic InAsSb Absorbers on GaAs Substrates;IEEE Sensors Journal;2024-05-01

2. Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate;Infrared Physics & Technology;2024-03

3. Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors;Opto-Electronics Review;2024-01-03

4. Heteroepitaxial growth of GaSb interfacial misfit array on GaAs substrate by molecular beam epitaxy;Journal of Crystal Growth;2023-08

5. Gradual funnel photon trapping enhanced InAs/GaSb type-II superlattice infrared detector;Optics Express;2022-09-29

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