Influence of anharmonic phonon decay on self-heating in Si nanowire transistors
Author:
Affiliation:
1. Integrated Systems Laboratory, ETH Zürich, Gloriastr. 35, 8092 Zürich, Switzerland
Funder
Swiss National Science Foundation (Schweizerische Nationalfonds)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893378
Reference22 articles.
1. Toward Nanowire Electronics
2. InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
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4. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
5. High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
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