Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2717538
Reference23 articles.
1. L. L. Berger, in CRC Handbook of Chemistry and Physics, edited by David R. Lide (Taylor & Francis, London, 2005), pp. 12–82.
2. Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
3. Implantation and Activation of High Concentrations of Boron in Germanium
4. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
5. Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Challenges in ultra-shallow junction technology;CMOS Past, Present and Future;2018
2. Hot Implantations of P into Ge: Impact on the Diffusion Profile;ECS Journal of Solid State Science and Technology;2017
3. Defect engineering for shallow n-type junctions in germanium: Facts and fiction;physica status solidi (a);2016-07-18
4. Vacancy-donor complexes in highlyn-type Ge doped with As, P and Sb;Journal of Physics: Condensed Matter;2016-06-28
5. Defect identification in semiconductors with positron annihilation: Experiment and theory;Reviews of Modern Physics;2013-11-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3