Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si-Reference-Cited by-同舟云学术

Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si

Published:2007-03-26 Issue:13 Volume:90 Page:133510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Ming,Nakajima Kaoru,Suzuki Motofumi,Kimura Kenji,Uematsu Masashi,Torii Kazuyoshi,Kamiyama Satoshi,Nara Yasuo,Watanabe Heiji,Shiraishi Kenji,Chikyow Toyohiro,Yamada Keisaku

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2717539

Reference21 articles.

1. Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

2. Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

3. Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

4. Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation

5. Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth

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