Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4880163
Reference45 articles.
1. Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes
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5. Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor
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