Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1529309
Reference10 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
3. Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)
4. Low‐temperature metalorganic chemical vapor deposition of InP on Si(001)
5. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
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