Understanding the switching mechanism of interfacial phase change memory-Reference-Cited by-同舟云学术

Understanding the switching mechanism of interfacial phase change memory

Published:2019-05-14 Issue:18 Volume:125 Page:184501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Okabe Kye L.¹^ORCID,Sood Aditya¹²^ORCID,Yalon Eilam¹^ORCID,Neumann Christopher M.¹^ORCID,Asheghi Mehdi²,Pop Eric¹³^ORCID,Goodson Kenneth E.²³,Wong H.-S. Philip¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

2. Department of Mechanical Engineering, Stanford University, Stanford, California 94305, USA

3. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

Funder

Stanford Non-Volatile Memory Technology Research Initiative

National Science Foundation

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5093907

Reference35 articles.

1. Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

2. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

3. Self-Aligned Nanotube–Nanowire Phase Change Memory

4. An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

5. Nanosecond switching in GeTe phase change memory cells

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