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Self-Aligned Nanotube–Nanowire Phase Change Memory

Published:2013-01-11 Issue:2 Volume:13 Page:464-469
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xiong Feng,Bae Myung-Ho,Dai Yuan,Liao Albert D.,Behnam Ashkan,Carrion Enrique A.,Hong Sungduk,Ielmini Daniele¹,Pop Eric

Affiliation:

1. Dipartimento di Elettronica e Informazione, Politecnico di Milano, 20133 Milano, Italy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl3038097

Reference33 articles.

1. Realizing All-Spin–Based Logic Operations Atom by Atom

2. Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

3. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

4. Nanoionics-based resistive switching memories

5. Phase-change materials for rewriteable data storage

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2. Thermal Confinement by Monolayer MoS₂ for Reduced RESET Current in Phase Change Memory Pillar Cells;ACS Applied Electronic Materials;2024-06-18

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4. Direct Laser Write‐Read‐Erase in a Functional Molecular Phase Change Material–Polymer Nanocomposite Thin Film;Advanced Optical Materials;2024-01-16

5. Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing;International Journal of Extreme Manufacturing;2024-01-04

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