Iodine doping in mercury cadmium telluride (Hg1−xCdxTe) grown by direct alloy growth using metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109895
Reference11 articles.
1. Compositional profile of HgCdTe in metalorganic chemical vapor deposition (MOCVD) system with multinozzles
2. Growth of uniform HgCdTe by metalorganic chemical vapor deposition system
3. The organometallic epitaxy of extrinsic p‐doped HgCdTe
4. Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy
5. Arsenic doping in metalorganic chemical vapor deposition Hg1−xCdxTe using tertiarybutylarsine and diethylarsine
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1. Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications;Journal of Electronic Materials;2017-06-06
2. The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures;Optical and Quantum Electronics;2017-02-28
3. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe;Applied Physics Letters;2015-11-02
4. Impurities and Defects;Device Physics of Narrow Gap Semiconductors;2009-08-28
5. Doping of epitaxial layers and heterostructures based on HgCdTe;Semiconductors;2006-01
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