Thermoelectric properties and figure of merit of a Te-doped InSb bulk single crystal
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130390
Reference14 articles.
1. Thermoelectric properties of Al1−xInxN and Al1−y−zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device
2. Thermal diffusivity and thermoelectric figure of merit of Al1−xInxN prepared by reactive radio-frequency sputtering
3. Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering
4. Thermoelectric properties of and devices based on free-standing GaN
5. Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy
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