Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short‐period superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110594
Reference11 articles.
1. Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of InxGa1-xAs on GaAs by Molecular Beam Epitaxy
2. Nature, origin and effect of dislocations in epitaxial semiconductor layers
3. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
4. Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained‐layer superlattices on heteroepitaxial GaAs/Si
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