Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures-Reference-Cited by-同舟云学术

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Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

Published:2010-11 Issue: Volume:20 Page:70-75
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

LIU Yi-jung,HUANG Chien-chang,CHEN Tai-you,HSU Chi-shiang,CHENG Shiou-ying,LIN Kun-wei,LIOU Jian-kai,LIU Wen-chau

Funder

National Science Council of China

Publisher

Elsevier BV

Subject

General Materials Science

Reference24 articles.

1. Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates[J];LIU;Optics Express,2010

2. Low resistance Ti/Pt/Au ohmic contacts to p-type GaN[J];ZHOU;Appl Phys Lett,2000

3. Current crowding in GaN/InGaN light emitting diodes on insulating substrates[J];GUO;J Appl Phys,2001

4. Efficient hole generation above 10(19) cm−3 in Mg-doped InGaN/GaN superlattices at room temperature[J];KUMAKURA;Jpn J Appl Phys,2000

5. Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice[J];SHEU;IEEE Electron Device Lett,2001

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4. Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes;Journal of the Korean Physical Society;2016-10

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