Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells-Reference-Cited by-同舟云学术

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

Published:2018-05-21 Issue:21 Volume:112 Page:213904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Aeberhard U.¹^ORCID,Gonzalo A.²^ORCID,Ulloa J. M.²

Affiliation:

1. IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany

2. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain

Funder

European Cooperation in Science and Technology

Ministerio de Economía y Competitividad

H2020 Research Infrastructures

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030625

Reference18 articles.

1. Solar cell efficiency tables (version 51)

2. Next Generation Photovoltaics

3. Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

4. Strain-balanced type-II superlattices for efficient multi-junction solar cells

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum scattering in one-dimensional periodic structures: A Green's function approach solved through continued fractions;Physical Review B;2024-08-02

2. Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys;Materials Science in Semiconductor Processing;2024-04

3. Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode;Opto-Electronics Review;2024-01-03

4. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages;Applied Surface Science;2024-01

5. Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06