Vertical transport in a GaInAsSb∕p-InAs broken-gap type II heterojunction-Reference-Cited by-同舟云学术

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Vertical transport in a GaInAsSb∕p-InAs broken-gap type II heterojunction

Published:2007-02 Issue:2 Volume:33 Page:137-146
ISSN:1063-777X
Container-title:Low Temperature Physics
language:en
Short-container-title:Low Temperature Physics

Author:

Berezovets V. A.,Moiseev K. D.,Mikhailova M. P.,Parfeniev R. V.,Yakovlev Yu. P.,Nizhankovski V. I.

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2409650

Reference24 articles.

1. Type-II quantum-well “W” lasers emitting at λ=5.4–7.3 μm

2. Room temperature type-II interband cascade laser

3. Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discovery of III–V Semiconductors: Physical Properties and Application;Semiconductors;2019-03

2. Band structure of a hybridized electron-hole system at a single broken-gap type II heterointerface;Low Temperature Physics;2019-02

3. Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field;Semiconductors;2017-10

4. Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction;Journal of Magnetism and Magnetic Materials;2012-10

5. Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields;Journal of Magnetism and Magnetic Materials;2009-04

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