Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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1. Room temperature type-II interband cascade laser
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3. Mid-infrared (λ≈7.4 μm) quantum cascade laser amplifier for high power single-mode emission and improved beam quality
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1. Exciton recombination energy in spherical quantum dots on Ga1−xInxAsySb1−y/GaSb grown by liquid-phase epitaxy;Journal of Applied Physics;2008-12
2. Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures;Journal of Applied Physics;2007-12
3. Vertical transport in a GaInAsSb∕p-InAs broken-gap type II heterojunction;Low Temperature Physics;2007-02
4. Basic materials research programs at the U.S. Air Force Office of Scientific Research;Materials Science and Engineering: B;2006-07
5. Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface;Journal of Applied Physics;2005-10-15
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