Field-effect transistors with LaAlO3 and LaAlOxNy gate dielectrics deposited by laser molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Field-effect transistors with LaAlO3 and LaAlOxNy gate dielectrics deposited by laser molecular-beam epitaxy

Published:2004-10-18 Issue:16 Volume:85 Page:3543-3545
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu X. B.,Lu H. B.,Chen Z. H.,Zhang X.,Huang R.,Zhou H. W.,Wang X. P.,Nguyen B. Y.,Wang C. Z.,Xiang W. F.,He M.,Cheng B. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1806547

Reference14 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Direct tunneling leakage current and scalability of alternative gate dielectrics

3. Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111)

4. Ultrathin zirconia/SiO2 dielectric stacks grown by ultraviolet–ozone oxidation

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