Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328715
Reference23 articles.
1. Silicon gate technology
2. Electronic properties of chemically deposited polycrystalline silicon
3. Passivation of grain boundaries in polycrystalline silicon
4. Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon
5. Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C
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