Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor
Author:
Affiliation:
1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
2. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5040364
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1. Room-temperature antiferromagnetism in CuMnAs
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4. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds
5. A useful pyramid scheme
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