Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2789782
Reference18 articles.
1. HgCdTe infrared detector material: history, status and outlook
2. Cadmium mercury telluride and the new generation of photoelectronic devices
3. Summary of HgCdTe 2D array technology in the U.K.
4. Activation of arsenic in epitaxial Hg 1-x Cd x Te (MCT)
5. Doping of epitaxial layers and heterostructures based on HgCdTe
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1. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06
2. Evolution of MBE HgCdTe defect structure studied with ion milling method;EPJ Web of Conferences;2016-12-15
3. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy;Russian Physics Journal;2016-07
4. Electrical and optical studies of a tellurium-related defect in molecular-beam epitaxy-grown HgCdTe;physica status solidi (c);2016-04-14
5. Model of V Hg Incorporation in Arsenic-Doped HgCdTe: First-Principles Calculations;Journal of Electronic Materials;2013-03-12
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