Hysteretic transfer characteristics of double-walled and single-walled carbon nanotube field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2789789
Reference28 articles.
1. Carbon nanotube electronics
2. Room-temperature transistor based on a single carbon nanotube
3. Single- and multi-wall carbon nanotube field-effect transistors
4. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
5. Controlling doping and carrier injection in carbon nanotube transistors
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3. A measurement technique for circumventing hysteresis and conductance drift in carbon nanotube field-effect transistors;Nanotechnology;2014-01-06
4. Selective silencing of the electrical properties of metallic single-walled carbon nanotubes by 4-nitrobenzenediazonium tetrafluoroborate;Journal of Materials Science;2013-11-27
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