Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its “Electronic Hourglass” Application with Zero-Static Power Consumption-Reference-Cited by-同舟云学术

Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its “Electronic Hourglass” Application with Zero-Static Power Consumption

Published:2019-10-21 Issue:11 Volume:2 Page:8253-8261
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Wang Shengkai¹²^ORCID,Huang Qi³,Zhao Jie³,Zhou Yi¹²,Zhao Xiaoliang¹²,Yao Peilin¹²,Liu Xinyu¹²,Liang Xuelei³

Affiliation:

1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

3. Key Laboratory for the Physics and Chemistry of New Device, Peking University, Beijing 100871, China

Funder

Ministry of Science and Technology of the People's Republic of China

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.9b01716

Reference36 articles.

1. Influence of Mobile Ions on Nanotube Based FET Devices

2. Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors

3. Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

4. High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

5. Hysteretic transfer characteristics of double-walled and single-walled carbon nanotube field-effect transistors

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1. Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO₂/Al₂O₃ by ALD;IEEE Transactions on Electron Devices;2022-03

2. Utilizing an SWCNT-TFT “Electronic Hourglass” for Artificial Synapse Application;ACS Applied Electronic Materials;2022-02-25

3. Correction to Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its “Electronic Hourglass” Application with Zero-Static Power Consumption;ACS Applied Energy Materials;2020-08-25

4. Selectable and Releasable Noncovalent Functionalization of Semiconducting SWCNTs by Biethynyl‐2,5‐bis(dodecoxy)benzene Unit‐Containing Conjugated Copolymers;Macromolecular Chemistry and Physics;2020-06-09