Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN multiquantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122587
Reference8 articles.
1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
2. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
3. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
4. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
5. Theoretical study of the band offsets at GaN/AlN interfaces
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