Resonant photothermal bending spectroscopy at variable temperature 25–150 °C and its application to hydrogenated microcrystalline silicon films
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517152
Reference3 articles.
1. Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy
2. On the photoionization of deep impurity centers in semiconductors
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1. Optical absorption spectra of perovskite thin films for defect estimation by photothermal bending spectroscopy;Japanese Journal of Applied Physics;2018-07-12
2. A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy;Journal of Non-Crystalline Solids;2008-05
3. Study of Nano-Scale Electrical Properties of Hydrogenated Microcrystalline Silicon Solar Cells by Conductive Atomic Force Microscope;Japanese Journal of Applied Physics;2007-05-08
4. Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy;Journal of Non-Crystalline Solids;2006-06
5. Optical Absorption Spectra of Hydrogenated Microcrystalline Silicon Films by Resonant Photothermal Bending Spectroscopy;Japanese Journal of Applied Physics;2006-05-09
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