Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy-Reference-Cited by-同舟云学术

Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy

Published:2002-10 Issue:1-4 Volume:74 Page:415-420
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Kunii Toshie,Kitao Junichi,Mori Kensuke,Yoshida Norimitsu,Nonomura Shuichi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference5 articles.

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2. Photoinduced effects on infrared and near infrared absorption of amorphous and microcrystalline Si measured by photothermal bending spectroscopy;Kitao;Anal. Sci. Special Issue,2001

3. Physics of Semiconductor Devices;Sze,1981

4. On the photoionization of deep impurity centers in semiconductors;Lucovsky;Solid State Commun.,1965

5. Optical Studies of Excess Carrier Recombination ina-Si: H: Evidence for Dispersive Diffusion

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