Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Author:
Affiliation:
1. Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
Funder
National Science Foundation
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5039823
Reference46 articles.
1. Van der Waals heterostructures
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5. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
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