Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures
Author:
Affiliation:
1. Leibniz-Institut im Forschungsverbund Berlin e.V., Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2. National Research University of Electronic Technology (MIET), Zelenograd 124498, Moscow, Russia
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b21490
Reference69 articles.
1. 2D materials and van der Waals heterostructures
2. Boron nitride substrates for high-quality graphene electronics
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4. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
5. Hexagonal boron nitride is an indirect bandgap semiconductor
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