Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions-Reference-Cited by-同舟云学术

Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions

Published:2023-04-03 Issue:14 Volume:122 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Haruyama Moriyoshi¹^ORCID,Okigawa Yuki²^ORCID,Okada Mitsuhiro²^ORCID,Nakajima Hideaki²^ORCID,Okazaki Toshiya²^ORCID,Kato Hiromitsu¹^ORCID,Makino Toshiharu¹^ORCID,Yamada Takatoshi²^ORCID

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305–8568, Japan

2. Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology 2 , 1-1-1 Higashi, Tsukuba, Ibaraki 305–8565, Japan

Abstract

We studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV centers at the graphene and the graphene-free region. The results revealed that about half of the total NV centers (NV0 + NV−) at the graphene-free region were unstable, while over 90% of the measured NV centers at the graphene region were stabilized as NV− centers. Graphene/diamond junctions contribute significantly to charge-state stabilization of shallow NV− centers in (111) diamond.

Funder

MEXT Quantum Leap Flagship Program

JSPS KAKENHI

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0143062/16820361/141601_1_5.0143062.pdf

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