Inhomogeneous pulsed laser melting of high‐dose Ge‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357703
Reference15 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
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4. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
5. Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates
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