Computer simulation of void growth dynamics under the action of electromigration and capillary forces in narrow thin interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1382835
Reference19 articles.
1. On void nucleation and growth in metal interconnect lines under electromigration conditions
2. A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structures
3. Electromigration induced transgranular slit failures in near bamboo Al and Al‐2% Cu thin‐film interconnects
4. Mechanisms of thermal stress relaxation and stress‐induced voiding in narrow aluminum‐based metallizations
5. Mechanical properties of thin films
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1. Irreversible thermodynamics of surfaces and interfaces: Special reference to the strained thin solid films on the substrates: Theory and practice;Journal of Applied Physics;2023-04-17
2. Physics-Based Model for Understanding Electromigration-Induced Cavity Evolution in Advanced Narrow Line Copper Interconnects;IEEE Transactions on Electron Devices;2022-09
3. Analysis of Electromigration-Induced Stress Evolution and Voiding in Cu Damascene Lines with Microstructure;Electromigration in Metals;2022-04-30
4. Fundamentals of Electromigration;Fundamentals of Electromigration-Aware Integrated Circuit Design;2018
5. Numerical simulations of migration and coalescence behavior of microvoids driven by diffusion and electric field in solder interconnects;Microelectronics Reliability;2017-04
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