Study of the characteristics of 1.55μm quantum dash/dot semiconductor lasers on InP substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3005194
Reference16 articles.
1. InGaAs-GaAs quantum-dot lasers
2. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
3. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed
4. Artificial control of optical gain polarization by stacking quantum dot layers
5. Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature
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1. Mode-Locking and Noise Characteristics of InAs/InP Quantum Dash/Dot Lasers;Journal of Lightwave Technology;2023-07-01
2. Broadband Laser for Optical Telecommunication;digital Encyclopedia of Applied Physics;2020-12-31
3. Improved dynamics of a tunnelling-injection quantum-dot laser under optical feedback;Quantum Electronics;2016-10-31
4. From Basic Physical Properties of InAs/InP Quantum Dots to State-of-the-Art Lasers for 1.55 µm Optical Communications;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17
5. Frequency noise analysis of 1.55 µm indium arsenide/indium phosphide quantum dot lasers: impact of non‐linear gain and direct carrier transition;IET Optoelectronics;2016-08
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