Optical gain and stimulated emission of cleaved cubic gallium nitrite
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123715
Reference19 articles.
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3. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
4. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
5. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source
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1. Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates;physica status solidi (c);2003-08-05
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3. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures;Journal of Physics: Condensed Matter;2002-05-29
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