Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference54 articles.
1. InGaN-based violet laser diodes
2. Group III nitride semiconductors for short wavelength light-emitting devices
3. Electroluminescence of a cubic GaN/GaAs (001) p–n junction
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4. Valence band structures of InAs/GaAs quantum rings using the Fourier transform method;Modelling and Simulation in Materials Science and Engineering;2009-02-17
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