Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes-Reference-Cited by-同舟云学术

Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes

Published:2019-10 Issue:10 Volume:9 Page:105015
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ghazali Norizzawati M.¹²,Tomizawa Hiroshi¹,Hagiwara Noriyuki¹³,Suzuki Katsuya¹³,Hashim Abdul M.¹²,Yamaguchi Tomohiro¹,Akita Seiji⁴^ORCID,Ishibashi Koji¹⁵

Affiliation:

1. Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

2. Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia

3. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan

4. Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531, Japan

5. RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120816

Reference30 articles.

1. Quantum-dot nanodevices with carbon nanotubes

2. Sub-10 nm Carbon Nanotube Transistor

3. Carbon-nanotube photonics and optoelectronics

4. Photon Antibunching in the Photoluminescence Spectra of a Single Carbon Nanotube

5. A tunable carbon nanotube electromechanical oscillator

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