Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3∕Nb:SrTiO3 and SrRuO3∕Nb:SrTiO3 determined by in situ photoemission spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2717517
Reference23 articles.
1. Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers
2. Engineered Interface of Magnetic Oxides
3. Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor
4. Direct evidence for a half-metallic ferromagnet
5. Inverse tunnel magnetoresistance in all-perovskite junctions ofLa0.7Sr0.3MnO3/SrTiO3/SrRuO3
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