Annealing effects on the electrical properties and microscopic structure of semi‐insulating polycrystalline silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356578
Reference21 articles.
1. Annealing characteristics of Si‐rich SiO2films
2. A Model of SIPOS Deposition Based on Infrared Spectroscopic Analysis
3. Highly reliable high-voltage transistors by use of the SIPOS process
4. A study of n+-SIPOS:p-Si heterojunction emitters
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric property and structure of anodic alumina template and their effects on the electrophoretic deposition characteristics of ZnO nanowire arrays;Journal of Applied Physics;2004-02
2. Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide;Solid-State Electronics;1998-04
3. Rapid thermal recrystallization of amorphous silicon films;Journal of Materials Research;1997-10
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