Rapid thermal recrystallization of amorphous silicon films

Abstract

In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800–1200 °C in vacuum 5 × 10−5 Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing.