Ab initio prediction of SiC nanotubes with negative strain energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863500
Reference19 articles.
1. Development of 15 kV 4H-SiC IGBTs
2. Nonvolatile Switching in Graphene Field-Effect Devices
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4. Ab initiostudy of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
5. Tuning the band structures of single walled silicon carbide nanotubes with uniaxial strain: A first principles study
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1. The Effects of Radial Compression on the Electronic Properties and Hydrogen Adsorption of SiC Nanotubes;physica status solidi (b);2018-08-29
2. First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons;Journal of Physics D: Applied Physics;2016-02-09
3. Room-temperature metal-free ferromagnetism, stability, and spin transport properties in topologically fluorinated silicon carbide nanotubes;RSC Advances;2016
4. Mechanical properties of chiral and achiral silicon carbide nanotubes under oxygen chemisorption;Journal of Molecular Modeling;2015-02-19
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