Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866356
Reference31 articles.
1. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
2. Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon
3. Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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2. Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A;Journal of Crystal Growth;2020-03
3. Optical properties demonstrating strong coupling of compactly arranged Ge quantum dots;Optics Express;2019-07-22
4. An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light–matter interaction associated with dual coupling;Nanoscale;2019
5. Controllable growth of GeSi nanostructures by molecular beam epitaxy;Journal of Semiconductors;2018-05-29
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