Diffusion in InP using evaporated Zn3P2film with transient annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341117
Reference11 articles.
1. Diffusion profiles of zinc in indium phosphide
2. Diffusion of Cd acceptors in InP and a diffusion theory for III‐V semiconductors
3. Carrier Density Profiles in Zn- and Cd-Diffused InP
4. Formation ofp+‐p−‐n−junctions in InP by Cd diffusion
5. A new open diffusion technique using evaporated Zn3P2and its application to a lateral p-n-p transistor
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1. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05
2. A model for diffusion of beryllium in InGaAs/InP heterostructures;Materials Science and Engineering: B;2001-03
3. Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2000-11
4. Laser doping in Si, InP and GaAs;Applied Surface Science;2000-02
5. Anomalous Lateral Zn Surface Diffusion in InP Caused by Zn-Contained Metallization;Journal of Electronic Materials;1997-01
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