Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions: Crucial role of the ion dose-Reference-Cited by-同舟云学术

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Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions: Crucial role of the ion dose

Published:2020-01-14 Issue:2 Volume:127 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Azarov Alexander¹²^ORCID,Galeckas Augustinas¹^ORCID,Mieszczyński Cyprian²,Hallén Anders³^ORCID,Kuznetsov Andrej¹

Affiliation:

1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, N-0316 Oslo, Norway

2. NOMATEN Centre of Excellence, National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Świerk, Poland

3. Royal Institute of Technology, KTH-EECS, Electrum 229, SE-164 40 Stockholm, Sweden

Funder

Research Council of Norway

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134011

Reference41 articles.

1. A comprehensive review of ZnO materials and devices

2. Materials modification with ion beams

3. Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN

4. Annealing of damage and stability of implanted ions in ZnO crystals

5. Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species

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1. Variation in defects and properties in composite of ZnO and α-Fe2O3 for sustainable wastewater treatment;Journal of Applied Physics;2023-06-16

2. Ion beam-induced defects in ZnO: A radiation hard metal oxide;Metal Oxide Defects;2023

3. Tuning defect-related optical bands by channeling implants in semiconductors;Journal of Physics D: Applied Physics;2022-12-12

4. Microstructural modifications induced in Si⁺-implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation;Physical Chemistry Chemical Physics;2022

5. Defects in Semiconductors;Journal of Applied Physics;2020-05-21

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