Charge multiplication in Au‐SiC (6H) Schottky junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321514
Reference7 articles.
1. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
2. Electron Emission from Breakdown Regions in SiCp−nJunctions
3. Avalanche Breakdown in Epitaxial SiC p‐n Junctions
4. Effects of deep impurities on n+p junction reverse-biased small-signal capacitance
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1. Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output;iScience;2019-12
2. SILICON CARBIDE SCHOTTKY BARRIER DIODE;International Journal of High Speed Electronics and Systems;2005-12
3. Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET;Microelectronics Journal;1999-01
4. Impact Ionization in 6H-SiC MOSFETs;Materials Science Forum;1998-02
5. SiC devices: physics and numerical simulation;IEEE Transactions on Electron Devices;1994-06
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