Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET-Reference-Cited by-同舟云学术

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Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET

Published:1999-01 Issue:1 Volume:30 Page:1-14
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Hsing Edward H.S,Gray Jeffery L

Publisher

Elsevier BV

Subject

General Engineering

Reference46 articles.

1. M. Bhatnagar, B. Baliga, Analysis of silicon carbide power device performance, in: Proc. 1991 Int. Symp. on Power Semiconductor Devices and ICs, 1991, pp. 176–180.

2. Recent developments in SiC single-crystal electronics;Ivanov;Semicond. Sci. Technol.,1992

3. High frequency performance of SiC hetero-junction bipolar transistors;Gao;IEEE Trans. Electron Devices,1994

4. J. Palmour, C. Carter Jr., C. Weitzel, K. Nordquist, High power and high frequency silicon carbide devices, in: Proc. Material Research Society Symp., Vol. 339, 1994, pp. 133–144.

5. J. Powell, L. Matus, Recent development in SiC (USA), in: G. Harris and C. Yang (Eds.), Springer Proceedings in Physics, Vol. 34, 1989, pp. 2–12.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact ionization coefficients of 4H- and 6H-SiC;The European Physical Journal Applied Physics;2012-10

2. Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances;Materials Science in Semiconductor Processing;2000-03

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