Superior two-dimensional electron gas on (511)A GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120679
Reference19 articles.
1. High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
2. Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)AGaAs substrates and their device applications
3. Interaction of a relaxing system with a dynamical environment
4. Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions
5. Growth and electrical transport properties of very high mobility two‐dimensional hole gases displaying persistent photoconductivity
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1. n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties;Russian Microelectronics;2005-03
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