Velocity saturation inn‐type AlxGa1−xAs single crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655314
Reference6 articles.
1. Transferred Electron Amplifiers and Oscillators
2. MICROWAVE OSCILLATIONS IN GaAsxP1‐xALLOYS
3. A high-speed bulk semiconductor microwave switch utilizing GaAs1-xPxmixed crystals
4. Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calibration of I(E) into v(d)(E) characteristics on H-shaped Gunn devices for AlzGa1-xAs alloys under hydrostatic pressure;Czechoslovak Journal of Physics;1998
2. High-Efficiency Monolithic Three-Terminal GaAs/Si Tandem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1996-02-28
3. Three-terminal monolithic cascade GaAs/Si solar cells;Solar Energy Materials and Solar Cells;1994-09-11
4. Some Low Field Transport Properties of LPE grown GaAs and AlAs Mixed Alloys and Saxena's Deep Donor;Defence Science Journal;1994-01-01
5. Velocity modulation in GaAs/AlxGa1−xAs impact avalanche transit‐time diodes;Journal of Applied Physics;1992-05
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