Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1886269
Reference14 articles.
1. Silicon-on-Insulator Technology: Materials to VLSI
2. The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
3. Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si
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