Observation of slip dislocations in (100) silicon wafers after BF2ion implantation and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337377
Reference8 articles.
1. Short Time Annealing
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Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Initiation time of near-infrared laser-induced slip on the surface of silicon wafers;Applied Physics Letters;2014-06-23
2. X-Ray Topography;MRS Proceedings;1993
3. Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers;Materials Letters;1990-10
4. Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.;MRS Proceedings;1990
5. Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon;MRS Proceedings;1989
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