Long wavelength emission in InxGa1−xAs quantum dot structures grown in a GaAs barrier by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652255
Reference13 articles.
1. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers
2. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
3. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
4. Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices
5. Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices
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1. Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm;Applied Physics Letters;2015-03-23
2. Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics;Nanotechnology;2014-01-09
3. MOVPE Processes;Design and Realization of Novel GaAs Based Laser Concepts;2012
4. Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition;Chinese Optics Letters;2009
5. Effects of spacer growth temperature on the optical properties of quantum dot laser structures;SPIE Proceedings;2007-12-21
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