Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb-Reference-Cited by-同舟云学术

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Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Published:2018-04-28 Issue:16 Volume:123 Page:161521
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Honggyu¹²,Meng Yifei¹²^ORCID,Klem John F.³,Hawkins Samuel D.³,Kim Jin K.³,Zuo Jian-Min¹²

Affiliation:

1. Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801, USA

2. Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993673

Reference44 articles.

1. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

2. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

3. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

4. Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

5. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of unintentional Sb in the tensile InAs layer of strain-balanced type-II InAs/InAsSb superlattices grown on GaSb by molecular beam epitaxy;Journal of Applied Physics;2023-08-01

2. Fine modulation of the energy band strategy to control the carrier confinement capability of digital alloys;Nanotechnology;2022-11-04

3. Assessing Sb Cross Incorporation in InAs/InAsSb Superlattices;Journal of Electronic Materials;2022-09-29

4. The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature;Applied Sciences;2022-01-27

5. InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering;Rare Metals;2021-09-29

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