Thin film aluminum nitride surface acoustic wave resonators for quantum acoustodynamics

Author:

Jiang Wenbing12ORCID,Chen Junfeng12ORCID,Liu Xiaoyu12,Niu Zhengqi13,Liu Kuang12,Peng Wei12ORCID,Wang Zhen12,Lin Zhi-Rong12ORCID

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050, China

2. University of Chinese Academy of Science 2 , Beijing 100049, China

3. ShanghaiTech University 3 , Shanghai 201210, China

Abstract

Quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate, and transduce stationary and flying quantum states. However, the limited lifetime of these hybrid quantum systems remains critical obstacles to extend their applications in quantum information processing. Here, we present potentials of thin film aluminum nitride to on-chip integrated phonons with superconducting qubits over previous bulk piezoelectric substrates. We have reported high-quality thin film GHz-SAW resonators with the highest internal quality factor Qi of 4.92×104 in the quantum regime. The internal losses of SAW resonators are systematically investigated by tuning the parameters of sample layout, power, and temperature. Our results manifest that SAWs on piezoelectric films are readily integrated with standard fabrication of Josephson junction quantum circuits and offer excellent acoustic platforms for high-coherence quantum acoustodynamics architectures.

Funder

Shanghai Technology Innovation Action Plan Integrated Circuit Technology Support Program

National Natural Science Foundation of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Key-Area Research and Development Program of Guangdong Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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