Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor-Reference-Cited by-同舟云学术

Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Published:2005-03-21 Issue:12 Volume:86 Page:123118
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kitade Tetsuya,Ohkura Kensaku,Nakajima Anri

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1894594

Reference8 articles.

1. Complementary digital logic based on the ‘‘Coulomb blockade’’

2. Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

3. Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate

4. Multigate single-electron transistors and their application to an exclusive-OR gate

5. T. Kitade, K. Ohkura, and A. Nakajima, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003, p. 584.

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